WFP830 WFP830 WFP830 WFP830 symbol parameter v a lue units v dss drain source v o ltage 500 v i d continuous drain current(@ t c=25 ) 4.5 a continuous drain current(@ t c=100 ) 2.9 a i dm drain current pulsed (note1) 18 a v gs gate to source v o ltage 30 v e as sing l e pulsed a v al anche energy (note 2) 300 mj e a r repetitive a v a lanche energy (note 1) 7.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d t o t a l po w er dissipation(@ t c =25 ) 73 w derating factor above 25 0.55 w/ t j, t stg junction and storage t e mperature -55~150 t l ma x imum lead t e mperature f or soldering purposes 300 cop y r ight@ w i n s emi microelectronics co.,ltd.,all rights rese r ved. re v , c no v . 2008 t02-2 silic silic silic silic o o o o n n n n n-c n-c n-c n-c h h h h a a a a nn nn nn nn el el el el mos mos mos mos f f f f et et et et features features features features 4.5a,500 v , r ds(on) (max 1.5 )@v gs =10v ultra-low gate charge( t y pical 32nc) fast s w itching capabi l ity 100% a v a lanche t e sted ma x imum junction t e mperature range(150 ) general general general general description description description description this po w er mosfet is produced using winsemi s advanced planar stripe, dmos technolog y . this latest technology has been especial l y designed to minimi z e on-state resistance, have a high rugged avalanche characteristics. this devices is special l y w ell suited for high ef fi ciency s w itch model po w er supplies, po w er factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings thermal thermal thermal thermal characteristics characteristics characteristics characteristics g g g g d d d d s s s s t t t t o o o o 220 220 220 220 symbol parameter v a lue units min t y p max r qjc thermal resistance, junction-to-case - - 1.7 /w r qcs thermal resistance, case to sink - 0.5 - /w r qja thermal resistance, junction-to-ambient - - 62.5 /w
WFP830 WFP830 WFP830 WFP830 2/7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical electrical electrical electrical characte characte characte characte r r r r istics istics istics istics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdo w n voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? o f f current i dss v ds =500 v, v gs = 0 v - - 1 a drain ? source breakdo w n voltage v (br)dss i d = 250 a, v gs = 0 v 500 - - v break voltage temperature coefficient bv dss / t j i d =25 0 a, referenced to 25 - 0.55 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 2 . 25a - 1.16 1.5 ? for w a r d transconductance gfs v ds = 40 v, i d =2.25a - 4.2 s input capacitance c iss v ds = 25 v, v gs = 0 v, f = 1 mhz - 800 1050 pf reverse trans f er capacitance c rss - 1 8 2 3 output capacitance c oss - 76 100 s w itching time rise time t r v dd =250 v, i d = 4.5 a r g =25 ? (note4,5) - 15 40 ns turn ? on time t on - 40 90 fall time t f - 85 180 turn ? off time t o ff - 45 100 total gate charge (gat e ? source plus gate ? drain) q g v dd = 400 v, v gs = 10 v, i d = 4.5 a (note4,5) - 32 44 nc gate ? source charge q gs - 3.7 - gate ? drain ( miller ) charge q gd - 15 - source source source source ? ? ? ? drain drain drain drain ratings ratings ratings ratings and and and and characte characte characte characte r r r r istics istics istics istics (ta (ta (ta (ta = = = = 2 2 2 2 5 5 5 5 c) c) c) c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 4.5 a pulse drain reverse current i dr p - - - 18 a for w a r d voltage (diode) v dsf i dr = 4.5 a, v gs = 0 v - - 1.4 v reverse recovery time t rr i dr =4.5 a, v gs = 0 v, di dr / dt = 100 a / s - 305 - ns reverse recovery charge q rr - 2.6 - c note 1.repeati v i t y rating :pulse w idth limited by junction temperature 2.l=24mh, i as = 4.5a,v dd =50 v , r g =25 ,starting t j =25 3.i sd 4.5a,di/dt 300 a /us, v dd WFP830 WFP830 WFP830 WFP830 3 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. 1 on-st a t e cha r acte r istics fig.2 t rans fe r cha r acte r istics fig.3 capacitance v a ri a t ion vs d r ain v o lt a ge fig.5 on- r e sistance v a ri a t ion vs j u nction t e mperatu r e fig.4 b r eakdown v o lt a ge v a ri a t ion vs t e mperatu r e fig.6 g a t e cha r ge cha r acte r istics
WFP830 WFP830 WFP830 WFP830 4 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 maximum sa f e operation a r ea fig.8 maximum d r ain cu r r ent vs case t e mperatu r e fig.9 t ransient t h e r mal r e sponse cu r v e
WFP830 WFP830 WFP830 WFP830 5 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.10 g a t e t e st ci r cuit & w a v e f o r m fig.11 r e sisti v e swit c h ing t e st ci r cuit & w a v e f o r m fig.12 un c l amped inducti v e sw it c h ing t e st ci r cuit & w a v e f o r m
WFP830 WFP830 WFP830 WFP830 6 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 p e ak diode r e c ov e r y dv/dt t e st ci r cuit & w a v e f o r m
WFP830 WFP830 WFP830 WFP830 7 /7 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o o o o -220c -220c -220c -220c package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
|
